 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q q Solder Dip q q q 16.20.5 3.2 2.3 q Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed High breakdown voltage with high reliability High-speed switching Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 1500 1500 7 20 5 4 100 3 150 -55 to +150 Unit V V V A A A W C C 21.00.5 15.00.2 0.7 15.00.3 11.00.2 5.00.2 3.2 3.20.1 2.00.2 1.10.1 2.00.1 0.60.2 5.450.3 10.90.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(b) Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time (L-load) Fall time (L-load) Diode forward voltage (TC=25C) Symbol ICBO VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 10V, IC = 5A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2A VCE = 10V, IC = 1A, f = 0.5MHz IC = 5A, IB1 = 1.2A, IB2 = -1.2A, Lleak = 5H IC = -6A, IB = 0 2 12 0.8 -2.3 7 4.5 15 8 1.5 V V MHz s s V min typ max 30 300 Unit A A V 1 Power Transistors PC -- Ta 120 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) (1) TC=25C IB=1.6A 1.4A 1.2A 1A 0.8A 0.6A 4 0.4A 2SD2057 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 3 VCE(sat) -- IC IC/IB=2 Collector power dissipation PC (W) 100 80 Collector current IC (A) 8 1 6 0.3 TC=-25C 100C 60 0.1 25C 40 0.2A 2 20 0.03 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 1000 hFE -- IC IC/IB=2 VCE=10V Area of safe operation (ASO) 30 10 ICP IC 50ms DC 10ms 1 0.3 0.1 0.03 0.01 Non repetitive pulse TC=25C t=1ms Base to emitter saturation voltage VBE(sat) (V) 3 25C 1 TC=100C -25C 0.3 Forward current transfer ratio hFE 300 100 30 10 TC=100C 3 1 0.3 0.1 0.01 0.03 25C -25C Collector current IC (A) 0.1 0.3 1 3 10 3 0.1 0.03 0.01 0.1 0.3 1 3 10 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) Area of safe operation, horizontal operation ASO 24 ICP f=15.75kHz, TC=25C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation 10000 Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 20 16 Thermal resistance Rth(t) (C/W) Collector current IC (A) 1000 100 (1) 10 (2) 12 8 4 <1mA 0 0 400 800 1200 1600 2000 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
Price & Availability of 2SD2057
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |